Research Associate in Molecular Beam Epitaxy
| Dyddiad hysbysebu: | 18 Mehefin 2025 |
|---|---|
| Cyflog: | Heb ei nodi |
| Gwybodaeth ychwanegol am y cyflog: | £38249-46735 per annum |
| Oriau: | Llawn Amser |
| Dyddiad cau: | 16 Gorffennaf 2025 |
| Lleoliad: | Sheffield, S10 2TN |
| Cwmni: | University of Sheffield |
| Math o swydd: | Dros dro |
| Cyfeirnod swydd: | 1198-43462340 |
Crynodeb
University of Sheffield
We are seeking a committed and motivated Research Associate with a keen interest in Molecular Beam Epitaxy (MBE) to join our EPSRC National Epitaxy Facility. As a Research Associate, the post holder will carry out original research on III-V semiconductor epitaxy contributing to projects in quantum technologies and integrated photonics. The Facility supports over £100M of research grants in more than 30 UK Universities and plays a major role in semiconductor research through the provision of world class epitaxial materials.
You will be responsible for:
● Development of MBE of III-V semiconductors, such as As, P, Sb or Bi-based. You will have access to three MBE reactors as well as major infrastructure for characterization and device fabrication.
● Development of epitaxy techniques for major innovations. This includes site-control of quantum dots, selective area growth, hybrid metal-semiconductor structures, and new types of mixed materials for lasers and detectors.
● Working with a range of collaborators and users of the Facility, playing a critical role in the developing unique and pioneering device concepts through world-class advanced MBE growth.
This post provides an opportunity to make a difference in this highly topical field. It will lead high quality research in collaboration with leading researchers and industry in a National Facility.
We are looking for someone educated to PhD level (or close to completing) in Molecular Beam Epitaxy (or a related subject) (or have equivalent experience). The ideal candidate will have a strong background in semiconductor epitaxy, with evidence for achievements in new material or device development. You will also have knowledge of experience of materials analysis techniques for semiconductor wafers including XRD, ECV, AFM, SEM, PL, Hall effect, and SIMS.
The School of Electrical and Electronic Engineering (EEE) belongs to the prestigious Faculty of Engineering. We are one of the largest academic communities of engineers in the UK, ranked joint 1st for Research Environment in the last Research Excellence Framework (REF 2021)! Our specific field (EEE) is also ranked very highly, which is a marker of our excellence and ambition (QS 2024: 11th in UK, The Guardian 2024: 3rd, The Times Higher 2024: 7th in the UK).
We are seeking a committed and motivated Research Associate with a keen interest in Molecular Beam Epitaxy (MBE) to join our EPSRC National Epitaxy Facility. As a Research Associate, the post holder will carry out original research on III-V semiconductor epitaxy contributing to projects in quantum technologies and integrated photonics. The Facility supports over £100M of research grants in more than 30 UK Universities and plays a major role in semiconductor research through the provision of world class epitaxial materials.
You will be responsible for:
● Development of MBE of III-V semiconductors, such as As, P, Sb or Bi-based. You will have access to three MBE reactors as well as major infrastructure for characterization and device fabrication.
● Development of epitaxy techniques for major innovations. This includes site-control of quantum dots, selective area growth, hybrid metal-semiconductor structures, and new types of mixed materials for lasers and detectors.
● Working with a range of collaborators and users of the Facility, playing a critical role in the developing unique and pioneering device concepts through world-class advanced MBE growth.
This post provides an opportunity to make a difference in this highly topical field. It will lead high quality research in collaboration with leading researchers and industry in a National Facility.
We are looking for someone educated to PhD level (or close to completing) in Molecular Beam Epitaxy (or a related subject) (or have equivalent experience). The ideal candidate will have a strong background in semiconductor epitaxy, with evidence for achievements in new material or device development. You will also have knowledge of experience of materials analysis techniques for semiconductor wafers including XRD, ECV, AFM, SEM, PL, Hall effect, and SIMS.
The School of Electrical and Electronic Engineering (EEE) belongs to the prestigious Faculty of Engineering. We are one of the largest academic communities of engineers in the UK, ranked joint 1st for Research Environment in the last Research Excellence Framework (REF 2021)! Our specific field (EEE) is also ranked very highly, which is a marker of our excellence and ambition (QS 2024: 11th in UK, The Guardian 2024: 3rd, The Times Higher 2024: 7th in the UK).