R&D Engineer
| Posting date: | 05 April 2024 |
|---|---|
| Salary: | £60,000 to £65,000 per year |
| Hours: | Full time |
| Closing date: | 05 May 2024 |
| Location: | Cambridge, Cambridgeshire |
| Company: | Polytec Personnel Ltd |
| Job type: | Permanent |
| Job reference: | 35230 |
Summary
Location: Cambridge (CB24)
Duration: Permanent
Hours: 9am until 5pm (Monday to Friday)
Salary: Up to £65,000
Job Reference: 35230
Polytec are looking for an R&D Engineer for our client based just north of Cambridge.
Responsibilities:
* Develop advanced MOVPE process for novel porous GaN structures
* Work with suppliers and contractors to deliver required epitaxial wafers into various technology projects
* Document and implement R&D practices, approaches and policies
* Develop in-house characterisation capabilities minimising the learning cycle time
* Analyse connections between epi process and device data improving yield and performance
Requirements:
* PhD / Master degree in Electrical Engineering, Physics, Materials Engineering or equivalent
* Good background knowledge on GaN materials and LED devices
* Hands on experience in GaN-on-Si epitaxy
* Proven MOCVD process development skills
* Strong understanding of the dependence of LED device performance on epitaxy process and design
* Good understanding of GaN materials and device characterisation techniques, such as XRD, PL, AFM, SEM, TEM, EL
* Good analytical and organisational skills
Please contact us as soon as possible for more details or apply below!
Duration: Permanent
Hours: 9am until 5pm (Monday to Friday)
Salary: Up to £65,000
Job Reference: 35230
Polytec are looking for an R&D Engineer for our client based just north of Cambridge.
Responsibilities:
* Develop advanced MOVPE process for novel porous GaN structures
* Work with suppliers and contractors to deliver required epitaxial wafers into various technology projects
* Document and implement R&D practices, approaches and policies
* Develop in-house characterisation capabilities minimising the learning cycle time
* Analyse connections between epi process and device data improving yield and performance
Requirements:
* PhD / Master degree in Electrical Engineering, Physics, Materials Engineering or equivalent
* Good background knowledge on GaN materials and LED devices
* Hands on experience in GaN-on-Si epitaxy
* Proven MOCVD process development skills
* Strong understanding of the dependence of LED device performance on epitaxy process and design
* Good understanding of GaN materials and device characterisation techniques, such as XRD, PL, AFM, SEM, TEM, EL
* Good analytical and organisational skills
Please contact us as soon as possible for more details or apply below!